Samsung Begins Mass Production Of Next-Generation Mobile Memory Using 30nm 2GB LPDDR3 Chips

Posted on Sep 18 2012 - 8:06am by Editorial Staff

Samsung Electronics this morning announced that South-Korean giant has begun mass production of industry’s first two gigabyte (GB), low power double-data-rate 3 (LPDDR3), using 30 nanometer (nm) class technology. The new 2GB LPDDR3 DRAM can transfer data at up to 1600 megabits per second (Mbps) per pin, which is approximately 50 percent faster than a LPDDR2 DRAM, providing a data transmission rate up to 12.8 gigabytes per second (GB/s).

Wanhoon Hong, Samsung’s executive vice president of memory sales and marketing, said that “We will embrace greater technical cooperation with industry leading mobile device makers, as we continue to provide timely next-generation memory solutions like 2GB LPDDR3 DRAM, in helping to accelerate growth of the mobile memory market. Further, with this, we are moving very assertively to expand our global leadership on the premium side of our extensive memory portfolio.”

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Editorial Staff at I2Mag is a team of subject experts led by Karan Chopra.